Influence of the H-2 Dilution and Filament Temperature on the Properties of P Doped Silicon Carbide Thin Films Produced by Hot-Wire Technique

AuthID
P-001-8QE
6
Author(s)
Mendes, L
·
Cenimat, RM
5
Editor(es)
Schropp, R; Branz, HM; Hack, M; Shimizu, I; Wagner, S
Tipo de Documento
Proceedings Paper
Year published
1998
Publicado
in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 in Materials Research Society Symposium Proceedings, ISSN: 0272-9172
Volume: 507, Páginas: 831-836 (6)
Conference
Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the Mrs Spring Meeting, Date: APR 14-17, 1998, Location: SAN FRANCISCO, CA, Patrocinadores: Mat Res Soc, Akzo Nobel, dpiX A Xerox Co, Fuji Elect Corp Res & Dev Ltd, Kaneka Corp, Mitsui Chem Co Ltd, NAPS France, Natl Renewable Energy Lab, Sanyo Elect Co Ltd, Tokuyama Corp, Voltaix Inc
Indexing
Publication Identifiers
Wos: WOS:000079335700128
Source Identifiers
ISSN: 0272-9172
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