Strain and Defects Depth Distributions in Undoped and Boron-Doped Si1-Xgex Layers Grown by Solid Phase Epitaxy

AuthID
 P-001-AP9
6
Author(s)
Rodriguez, A
·
Rodriguez, T
·
daSilva, MF
·
Ballesteros, C
Tipo de Documento
Article
Year published
1997
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 82, Número: 6, Páginas: 2887-2895 (9)
Indexing
Wos®
Scopus®
Publication Identifiers
SCOPUS: 2-s2.0-0008742185
Wos: WOS:A1997XX99600024
Source Identifiers
ISSN: 0021-8979
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