N-Vacancy Defects in C-Bn and W-Bn

AuthID
P-001-CAZ
4
Author(s)
Mota, R
·
Piquini, P
·
Fazzio, A
2
Editor(es)
Davies, G; Nazare, MH
Tipo de Documento
Article
Year published
1997
Publicado
in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 in MATERIALS SCIENCE FORUM, ISSN: 0255-5476
Volume: 258-2, Número: PART 2, Páginas: 1275-1279 (5)
Conference
19Th International Conference on Defects in Semiconductors (Icds-19), Date: JUL, 1997, Location: AVEIRO, PORTUGAL, Patrocinadores: European Union DG XII Sci Res & Dev, Fundacao Calouste Gulbenkian, Junta Nacl Investigacio Cient & Tecnol, USA Res Off, Trans Tech Publicat Ltd, USN Off Naval Res Grant
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-3743120576
Wos: WOS:000072749500208
Source Identifiers
ISSN: 0255-5476
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