Publicações

Influence of the Sputtering Parameters on the Properties of Al2O3 and Aln Insulators in Spin Tunneling Junctions

AuthID
P-001-CR9

Author(s)

Plaskett, TS

Freitas, PP

Sun, JJ

Sousa, RC

da Silva, FF

Galvao, TTP

Pinho, NM

Cardoso, S

da Silva, MF

Soares, JC

Editor(es)

Tobin, J; Chambliss, D; Kubinski, D; Barmak, K; Dederichs, P; deJonge, W; Katayama, T; Schuhl, A

Tipo de Documento

Proceedings Paper

Year published

1997

Publicado

in MAGNETIC ULTRATHIN FILMS, MULTILAYERS AND SURFACES - 1997 in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN: 0272-9172

Volume: 475, Páginas: 469-474 (6)

Conference

9Th International Symposium on the Structure and Properties of Magnetic Ultrathin Films, Multilayers, Surfaces, and Nanostructures, Date: MAR 31-APR 04, 1997, Location: SAN FRANCISCO, CA, Patrocinadores: Ford Res Lab, Digital Instruments, Fujitsu Ltd, GMW Associates, Hitachi Ltd, Cent Res Lab, Komag Inc, Lake Shore Cryotronics Inc, Lawrence Livermore Natl Lab, Dept Energy, MDC Vacuum Prod Corp, MMR Technol, Phys Electr Inc, Princeton Measurements Corp, Tencor Instruments, Toshiba Corp, US Inc

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