Photoluminescence Study of Cadmium-Related Defects in Oxygen-Rich Silicon

AuthID
 P-001-DCX
4
Author(s)
McGlynn, E
·
Henry, MO
·
doCarmo, MC
Tipo de Documento
Article
Year published
1996
Publicado
in PHYSICAL REVIEW B, ISSN: 0163-1829
Volume: 54, Número: 20, Páginas: 14494-14503 (10)
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Publication Identifiers
SCOPUS: 2-s2.0-0343278374
Wos: WOS:A1996VX71700046
Source Identifiers
ISSN: 0163-1829
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