Photoluminescence Study of Cadmium-Related Defects in Oxygen-Rich Silicon

AuthID
 P-001-DCX
4
Author(s)
McGlynn, E
·
Henry, MO
·
doCarmo, MC
Document Type
Article
Year published
1996
Published
in PHYSICAL REVIEW B, ISSN: 0163-1829
Volume: 54, Issue: 20, Pages: 14494-14503 (10)
Indexing
Wos®
Scopus®
Crossref®
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-0343278374
Wos: WOS:A1996VX71700046
Source Identifiers
ISSN: 0163-1829
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas instituições

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service