Publicações

Defect Development and Dopant Location Due to Elevated Temperature Implantation of Inp with Mev Zinc Ions

AuthID
P-001-E7Z

Author(s)

Krause, H

Flagmeyer, RH

Vogt, J

Kling, A

Butz, T

Tipo de Documento

Article

Year published

1996

Publicado

in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X

Volume: 113, Número: 1-4, Páginas: 209-213 (5)

Conference

4Th European Conference on Accelerators in Applied Research and Technology (Ecaart-4), Date: AUG 29-SEP 02, 1995, Location: ZURICH, SWITZERLAND, Host: SWISS FED INST TECHNOL

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Publication Identifiers

DOI: 10.1016/0168-583x(95)01330-x

SCOPUS: 2-s2.0-0030166112

Wos: WOS:A1996UW20200047

Source Identifiers

ISSN: 0168-583X

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Defect Development and Dopant Location Due to Elevated Temperature Implantation of Inp with Mev Zinc Ions

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Defect Development and Dopant Location Due to Elevated Temperature Implantation of Inp with Mev Zinc Ions

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