A Photoluminescence Study of a Series of Closely Related Axial Defects of Monoclinic I and Rhombic I Symmetry in Oxygen-Rich, Zinc-Doped Silicon

AuthID
 P-001-E8H
6
Author(s)
Henry, MO
·
Campion, JD
·
Daly, SE
·
McGlynn, E
·
DoCarmo, MC
Tipo de Documento
Article
Year published
1996
Publicado
in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN: 0268-1242
Volume: 11, Número: 6, Páginas: 930-934 (5)
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Publication Identifiers
SCOPUS: 2-s2.0-0030172346
Wos: WOS:A1996UQ28400014
Source Identifiers
ISSN: 0268-1242
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