Structural Properties of Cdte and Hg1-Xcdxte Epitaxial Layers Grown on Sapphire Substrates

AuthID
 P-001-EHD
7
Author(s)
daSilva, MF
·
Franzosi, P
·
Bernardi, S
·
Dieguez, E
Tipo de Documento
Article
Year published
1996
Publicado
in JOURNAL OF CRYSTAL GROWTH, ISSN: 0022-0248
Volume: 161, Número: 1-4, Páginas: 195-200 (6)
Conference
Symposium D on Purification, Doping and Defects in Ii-Vi Materials, at the 1995 E-Mrs Spring Conference, Date: MAY 22-24, 1995, Location: STRASBOURG, FRANCE, Patrocinadores: European Mat Res Soc
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Publication Identifiers
SCOPUS: 2-s2.0-0030121765
Wos: WOS:A1996UL38100034
Source Identifiers
ISSN: 0022-0248
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