The Substitutionality of Hafnium in Sapphire by Ion Implantation and Low Temperature Annealing (Reprinted from Nuclear Instruments and Methods in Physics B, Vol 106, Pg 602-605, 1995)
9Th International Conference on Ion Beam Modification of Materials (Ibmm 95), Date: FEB 05-10, 1995, Location: CANBERRA, AUSTRALIA, Patrocinadores: Austr Natl Univ, Dept Electr Mat Engn, Acad Pr, Harcourt Brace Jovanovich, Alphatech Int Ltd, Austr Mat Res Soc, Balzers Austr P L, Danfysik A S, Elsevier, High Voltage Engn, IBM Austr, Natl Electrostat Corp, Stanton Sci, Host: AUSTR NATL UNIV
