The Substitutionality of Hafnium in Sapphire by Ion Implantation and Low Temperature Annealing

AuthID
P-001-FZ1
6
Author(s)
Melo, AA
·
daSilva, MF
·
Freitag, K
Tipo de Documento
Article
Year published
1995
Publicado
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X
Volume: 106, Número: 1-4, Páginas: 602-605 (4)
Conference
9Th International Conference on Ion Beam Modification of Materials (Ibmm 95), Date: FEB 05-10, 1995, Location: CANBERRA, AUSTRALIA, Patrocinadores: Austr Natl Univ, Dept Electr Mat Engn, Acad Pr, Harcourt Brace Jovanovich, Alphatech Int Ltd, Austr Mat Res Soc, Balzers Austr P L, Danfysik A S, Elsevier, High Voltage Engn, IBM Austr, Natl Electrostat Corp, Stanton Sci, Host: AUSTR NATL UNIV
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-24544453705
Wos: WOS:A1995TM52100110
Source Identifiers
ISSN: 0168-583X
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