High Field-Effect Mobility Zinc Oxide Thin Film Transistors Produced at Room Temperature

AuthID
 P-00F-H9D
9
Author(s)
Goncalves, A
·
Tipo de Documento
Proceedings Paper
Year published
2004
Publicado
in Journal of Non-Crystalline Solids, ISSN: 0022-3093
Volume: 338-340, Número: 1 SPEC. ISS., Páginas: 806-809
Indexing
Scopus®
Crossref®
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-2942622227
Source Identifiers
ISSN: 0022-3093
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service