Peculiarities of Interstitial Carbon and Di-Carbon Defects in Si

AuthID
 P-001-HQS
4
Author(s)
Jones, R
·
Oberg, S
·
Leary, P
·
2
Editor(es)
Suezawa, M; KatayamaYoshida, H
Tipo de Documento
Article
Year published
1995
Publicado
in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 in MATERIALS SCIENCE FORUM, ISSN: 0255-5476
Volume: 196-, Número: pt 2, Páginas: 785-789 (5)
Conference
18Th International Conference on Defects in Semiconductors (Icds-18), Date: JUL 23-28, 1995, Location: SENDAI, JAPAN, Patrocinadores: Minist Educ Sci & Culture Japan
Indexing
Wos®
Scopus®
Publication Identifiers
SCOPUS: 2-s2.0-0029541050
Wos: WOS:A1995BE88Y00134
Source Identifiers
ISSN: 0255-5476
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