Oxygen Complexing with Group Ii Impurities in Silicon

AuthID
 P-001-HQW
7
Author(s)
Daly, SE
·
McGlynn, E
·
Henry, MO
·
Campion, JD
·
DoCarmo, MC
·
2
Editor(s)
Suezawa, M; KatayamaYoshida, H
Document Type
Article
Year published
1995
Published
in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 in MATERIALS SCIENCE FORUM, ISSN: 0255-5476
Volume: 196-, Pages: 1303-1307 (5)
Conference
18Th International Conference on Defects in Semiconductors (Icds-18), Date: JUL 23-28, 1995, Location: SENDAI, JAPAN, Sponsors: Minist Educ Sci & Culture Japan
Indexing
Wos®
Publication Identifiers
Wos: WOS:A1995BE88Y00219
Source Identifiers
ISSN: 0255-5476
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