The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

AuthID
P-001-HW3
4
Author(s)
5
Editor(es)
Collins, RW; Tsai, CC; Hirose, M; Koch, F; Brus, L
Tipo de Documento
Proceedings Paper
Year published
1995
Publicado
in MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS in Materials Research Society Symposium Proceedings, ISSN: 0272-9172
Volume: 358, Páginas: 787-792 (6)
Conference
Symposium F: Microcrystalline and Nanocrystalline Semiconductors, at the 1994 Fall Meeting of the Materials-Research-Society, Date: NOV 29-DEC 02, 1994, Location: BOSTON, MA, Patrocinadores: MAT RES SOC
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0029213002
Wos: WOS:A1995BC88M00120
Source Identifiers
ISSN: 0272-9172
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