Passivation of Ge Nanocrystals in Sio2

AuthID
 P-00F-KAD
8
Author(s)
Jensen, JS
·
Pedersen, TPL
·
Bomholt, P
·
Chevallier, J
·
Hansen, O
·
Larsen, AN
·
Nielsen, BB
5
Editor(es)
Pichaud, B; Claverie, A; Alquier, D; Richter, H; Kittler, M
Tipo de Documento
Article
Year published
2005
Publicado
in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI in SOLID STATE PHENOMENA, ISSN: 1012-0394
Volume: 108-109, Páginas: 33-38 (6)
Conference
11Th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (Gadest 2005), Date: SEP 25-30, 2005, Location: Giens, FRANCE, Patrocinadores: TECSEN, CEMES CNRS, LMP
Indexing
Wos®
Scopus®
Publication Identifiers
SCOPUS: 2-s2.0-36049031189
Wos: WOS:000234198300005
Source Identifiers
ISSN: 1012-0394
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service