Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System

AuthID
 P-00F-KJG
9
Author(s)
Nakamine, Y
·
Inaba, N
·
Uchida, K
·
Stegner, AR
·
Brandt, MS
·
Stutzman, M
·
Oda, S
Tipo de Documento
Article
Year published
2011
Publicado
in JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN: 0021-4922
Volume: 50, Número: 2, Páginas: 025002 (5)
Indexing
Wos®
Scopus®
Crossref®8
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-79951902255
Wos: WOS:000287525300045
Source Identifiers
ISSN: 0021-4922
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