Annealing Behavior Of Compound Semiconductors After Ion-Implantation Investigated By Emission-Channeling And Blocking

AuthID
 P-00F-KSK
5
Author(s)
JAHN, SG
·
HOFSASS, H
·
WINTER, S
·
RECKNAGEL, E
2
Editor(es)
STANEK, J; FEDZIWIATR, AT
Tipo de Documento
Proceedings Paper
Year published
1990
Publicado
in PROCEEDINGS OF XXV ZAKOPANE SCHOOL ON PHYSICS, VOL 1: CONDENSED MATTER STUDIES BY NUCLEAR METHODS
Páginas: 331-339 (9)
Conference
25Th Zakopane School On Physics, Date: APR 28-MAY 12, 1990, Location: ZAKOPANE, POLAND, Patrocinadores: HENRYK NIEWODNICZANSKI INST NUCL PHYS, JAGIELLONIAN UNIV, INST PHYS
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Wos®
Publication Identifiers
Wos: WOS:A1990BT12A00017
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