High-Temperature Annealing Behavior of Μτ Products of Electrons and Holes in A-Si:h

AuthID
 P-00F-M4B
2
Author(s)
Wang, F
·
Tipo de Documento
Article
Year published
1992
Publicado
in Journal of Applied Physics, ISSN: 0021-8979
Volume: 71, Número: 2, Páginas: 791-795
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Publication Identifiers
SCOPUS: 2-s2.0-0003588891
Source Identifiers
ISSN: 0021-8979
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