Electron And Hole Transport Perpendicular To The Planes Of A-Si:h/A-Si,Ge:h Compositional Superlattices.

AuthID
 P-00F-MMA
7
Author(s)
Kolodzey, J
·
Aljishi, S
·
Shen, DS
·
Quinlan, S
·
Lyon, SA
·
Wagner, S
Tipo de Documento
Proceedings Paper
Year published
1986
Publicado
in Materials Research Society Symposia Proceedings, ISSN: 0272-9172
Volume: 70, Páginas: 429-434
Conference
Materials Issues in Amorphous Semiconductor Technology., Location: Palo Alto, CA, USA, Patrocinadores: Materials Research Soc, Pittsburgh, PA, USA
Indexing
Scopus®
Publication Identifiers
SCOPUS: 2-s2.0-0022962462
Source Identifiers
ISSN: 0272-9172
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