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2.2 Ev Luminescence in Gan
AuthID
P-00F-NEX
P-00F-NEX
11
Author(s)
Hofmann, DM
·Kovalev, D
·Volm, D
·Meyer, BK
·Xavier, C
·Pereira, E
·Mokov, EN
·Amano, H
·Akasaki, I
4
Editor(es)
Ponce, FA; Dupuis, RD; Nakamura, S; Edmond, JA
Tipo de Documento
Proceedings Paper
Year published
1996
Publicado
in GALLIUM NITRIDE AND RELATED MATERIALS in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN: 0272-9172
Volume: 395, Páginas: 619-624 (6)
Conference
1St International Symposium on Gallium Nitride and Related Materials, Date: NOV 27-DEC 01, 1995, Location: BOSTON, MA, Patrocinadores: Mat Res Soc, Adv Res Projects Agcy, Air Prod & Chem Inc, AIXTRON, Akzo Chem Inc, USA, Army Res Off, Cree Res Inc, Crystal Syst, EMCORE Corp, Hewlett Packard OED, JEOL US, Morton Int, Natl Sci Fdn, USN, Off Naval Res, Rockwell Int
Publication Identifiers
SCOPUS: 2-s2.0-0029765051
Wos: WOS:A1996BG25Y00093
Source Identifiers
ISSN: 0272-9172
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