Direct Evidence For Substitutional Li After Ion-Implantation Into Highly Phosphorus-Doped Si

AuthID
 P-00F-QHD
5
Author(s)
HOFSASS, H
·
JAHN, SG
·
WINTER, S
·
RECKNAGEL, E
Tipo de Documento
Article
Year published
1993
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 62, Número: 7, Páginas: 684-686 (3)
Indexing
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Publication Identifiers
SCOPUS: 2-s2.0-0342987154
Wos: WOS:A1993KL87800008
Source Identifiers
ISSN: 0003-6951
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