The Use of Neutron Diffraction in the Quantitative Characterization of Dopant-Dependent Dynamical Properties of Semiconductors

AuthID
 P-00F-RC8
4
Author(s)
Martin y Marero, DMY
·
Fiederle, M
·
Dieguez, E
Tipo de Documento
Article
Year published
2004
Publicado
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 350, Número: 1-3, Páginas: E549-E552 (4)
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Publication Identifiers
SCOPUS: 2-s2.0-23144435808
Wos: WOS:000207887900137
Source Identifiers
ISSN: 0921-4526
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