Observation of Dislocation Etch Pits in a Sapphire Crystal Grown by Cz Method Using Environmental Sem

AuthID
 P-00F-RF3
4
Author(s)
Yin, S
·
Shao, M
·
Zhang, X
Tipo de Documento
Article
Year published
2004
Publicado
in Journal of Crystal Growth, ISSN: 0022-0248
Volume: 266, Número: 4, Páginas: 519-522
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Publication Identifiers
SCOPUS: 2-s2.0-2442437884
Source Identifiers
ISSN: 0022-0248
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