Modeling Of The Impedance Behavior Of An Amorphous-Semiconductor Schottky-Barrier In High Depletion Conditions - Application To The Study Of The Titanium Anodic Oxide Electrolyte Junction

AuthID
 P-001-JGD
3
Author(s)
Tipo de Documento
Article
Year published
1994
Publicado
in ELECTROCHIMICA ACTA, ISSN: 0013-4686
Volume: 39, Número: 14, Páginas: 2197-2205 (9)
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Scopus®
Crossref®21
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Publication Identifiers
SCOPUS: 2-s2.0-0038187180
Wos: WOS:A1994PH55000013
Source Identifiers
ISSN: 0013-4686
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