Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900 Degrees C

AuthID
P-00G-9X6
4
Author(s)
Langouche, G
·
2
Editor(es)
Davies, G; Nazare, MH
Tipo de Documento
Article
Year published
1997
Publicado
in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 in Materials Science Forum, ISSN: 0255-5476
Volume: 258-2, Páginas: 1503-1508 (6)
Conference
19Th International Conference on Defects in Semiconductors (Icds-19), Date: JUL, 1997, Location: AVEIRO, PORTUGAL, Patrocinadores: European Union DG XII Sci Res & Dev, Fundacao Calouste Gulbenkian, Junta Nacl Investigacio Cient & Tecnol, USA Res Off, Trans Tech Publicat Ltd, USN Off Naval Res Grant
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Publication Identifiers
Wos: WOS:000072749500246
Source Identifiers
ISSN: 0255-5476
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