Regrowth of Indium-Implanted (100), (110) and (111) Silicon Crystals Studied with Rutherford Backscattering and Perturbed Angular Correlation Techniques

AuthID
 P-00H-6YC
6
Author(s)
Da Silva, M
·
Melo, A
·
Soares, J
·
Feuser, U
·
Vianden, R
Tipo de Documento
Article
Year published
1989
Publicado
in Materials Science and Engineering: B, ISSN: 0921-5107
Volume: 4, Número: 1-4, Páginas: 189-195
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ISSN: 0921-5107
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