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A-Si-H Ambipolar Diffusion Length And Effective Lifetime Measured By Flying Spot (Fst) And Spectral Photovoltage (Spt) Techniques

AuthID
P-001-Q9S

Author(s)

VIEIRA, M

MARTINS, R

FORTUNATO, E

SOARES, F

GUIMARAES, L

Tipo de Documento

Article

Year published

1991

Publicado

in JOURNAL OF NON-CRYSTALLINE SOLIDS, ISSN: 0022-3093

Volume: 137, Número: PART 1, Páginas: 479-482 (4)

Conference

14Th International Conf On Amorphous Semiconductors - Science And Technology ( Icas-14 ), Date: AUG 19-23, 1991, Location: GARMISCH PARTENKIRCHEN, GERMANY

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Publication Identifiers

DOI: 10.1016/s0022-3093(05)80159-0

SCOPUS: 2-s2.0-0026415491

Wos: WOS:A1991GX22700117

Source Identifiers

ISSN: 0022-3093

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A-Si-H Ambipolar Diffusion Length And Effective Lifetime Measured By Flying Spot (Fst) And Spectral Photovoltage (Spt) Techniques

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A-Si-H Ambipolar Diffusion Length And Effective Lifetime Measured By Flying Spot (Fst) And Spectral Photovoltage (Spt) Techniques

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