Effect of Anti-Diffusion Oxide Layer on Enhanced Thermal Stability of Magnetic Tunnel Junctions

AuthID
 P-00H-PAM
4
Author(s)
S., C
·
P., FP
Tipo de Documento
Article
Year published
2006
Publicado
in Chinese Physics Letters - Chinese Phys. Lett., ISSN: 0256-307X
Volume: 23, Número: 4, Páginas: 932-935
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ISSN: 0256-307X
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