Publicações

Regrowth Of Indium-Implanted (100), (110) And (111) Silicon-Crystals Studied With Rutherford Backscattering And Perturbed Angular-Correlation Techniques

AuthID
P-001-SDP

Author(s)

ALVES, E

DASILVA, MF

MELO, AA

SOARES, JC

FEUSER, U

VIANDEN, R

Tipo de Documento

Article

Year published

1989

Publicado

in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, ISSN: 0921-5107

Volume: 4, Número: 1-4, Páginas: 189-195 (7)

Conference

Symp At The 1989 Spring Meeting Of The European Materials Soc : Science And Technology Of Defects In Silicon, Date: MAY 30-JUN 02, 1989, Location: STRASBOURG, FRANCE, Patrocinadores: IBM FRANCE, GATAN, CTR NATL ETUD TELECOMMUN, EUROPEAN MAT RES SOC, Host: COUNCIL EUROPE & EUROPEAN PARLIAMENT

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