Strain Relaxation Mechanisms in Si1−Xgex Layers Grown by Solid-Phase Epitaxy: Influence of the Layer Composition and Growth Temperature

AuthID
 P-00J-B6Z
6
Author(s)
Rodríguez, A
·
Rodríguez, T
·
Soares, JC
·
Da Silva, MF
·
Ballesteros, C
Tipo de Documento
Article
Year published
1999
Publicado
in Journal of Electronic Materials - Journal of Elec Materi, ISSN: 0361-5235
Volume: 28, Número: 2, Páginas: 77-82
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ISSN: 0361-5235
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