Strain Compensation by Heavy Boron Doping in Si1– Xge X Layers Grown by Solid Phase Epitaxy

AuthID
 P-00J-V33
8
Author(s)
Rodríguez, A
·
Rodríguez, T
·
Sanz-Hervás, A
·
Soares, JC
·
da Silva, MF
·
Ballesteros, C
·
Gwilliam, RM
Tipo de Documento
Article
Year published
1997
Publicado
in Journal of Materials Research - J. Mater. Res., ISSN: 0884-2914
Volume: 12, Número: 07, Páginas: 1698-1705
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ISSN: 0884-2914
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