Biased Doped Silicene as a Way to Tune Electronic Conduction

AuthID
 P-00K-07N
2
Author(s)
Loktev, VM
Tipo de Documento
Article
Year published
2016
Publicado
in PHYSICAL REVIEW B, ISSN: 1098-0121
Volume: 93, Número: 4
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Publication Identifiers
SCOPUS: 2-s2.0-84955244466
Wos: WOS:000368297400005
Source Identifiers
ISSN: 1098-0121
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