A Thermalization Energy Analysis of the Threshold Voltage Shift in Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Under Positive Gate Bias Stress

AuthID
 P-00K-9D6
6
Author(s)
Niang, KM
·
Cobb, B
·
Powell, MJ
·
Flewitt, AJ
Tipo de Documento
Article
Year published
2016
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 108, Número: 9, Páginas: 093505 (4)
Indexing
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Publication Identifiers
SCOPUS: 2-s2.0-84960156514
Wos: WOS:000375329200058
Source Identifiers
ISSN: 0003-6951
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