Transparent Field-Effect Transistors Based on Aln-Gate Dielectric and Igzo-Channel Semiconductor

AuthID
 P-00K-E38
6
Author(s)
Besleaga, C
·
Stan, GE
·
Pintilie, I
·
Martins, R
Tipo de Documento
Article
Year published
2016
Publicado
in Applied Surface Science, ISSN: 0169-4332
Volume: 379, Páginas: 270-276
Indexing
Scopus®
Crossref®
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-84964546688
Source Identifiers
ISSN: 0169-4332
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service