Transparent Field-Effect Transistors Based on Aln-Gate Dielectric and Igzo-Channel Semiconductor

AuthID
 P-00K-HRD
6
Author(s)
Besleaga, C
·
Stan, GE
·
Pintilie, I
·
Document Type
Article
Year published
2016
Published
in APPLIED SURFACE SCIENCE, ISSN: 0169-4332
Volume: 379, Pages: 270-276 (7)
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Wos®
Google Scholar®
Publication Identifiers
Wos: WOS:000376819300036
Source Identifiers
ISSN: 0169-4332
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