Hole Mobility Modulation of Solution-Processed Nickel Oxide Thin-Film Transistor Based on High-K Dielectric

AuthID
 P-00K-JPW
7
Author(s)
Liu, GX
·
Zhu, HH
·
Shin, B
·
Shan, FK
Tipo de Documento
Article
Year published
2016
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 108, Número: 23, Páginas: 233506 (5)
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Publication Identifiers
SCOPUS: 2-s2.0-84974623209
Wos: WOS:000378924700049
Source Identifiers
ISSN: 0003-6951
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