Energy-Dependent Relaxation Time in Quaternary Amorphous Oxide Semiconductors Probed by Gated Hall Effect Measurements

AuthID
 P-00M-DGG
9
Author(s)
Socratous, J
·
Watanabe, S
·
Banger, KK
·
Warwick, CN
·
Martins, R
·
Sirringhaus, H
Tipo de Documento
Article
Year published
2017
Publicado
in PHYSICAL REVIEW B, ISSN: 2469-9950
Volume: 95, Número: 4
Indexing
Wos®
Scopus®
Crossref®10
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-85010749462
Wos: WOS:000392075400004
Source Identifiers
ISSN: 2469-9950
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