Lattice Location of Implanted Co in Heavily Doped (N+)- and (P)+-Type Silicon

AuthID
 P-00M-MY2
7
Author(s)
da Silva, MR
·
da Costa Pereira, LMD
·
Tipo de Documento
Article
Year published
2017
Publicado
in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, ISSN: 0947-8396
Volume: 123, Número: 4
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Publication Identifiers
SCOPUS: 2-s2.0-85016742530
Wos: WOS:000397581200071
Source Identifiers
ISSN: 0947-8396
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