Development of Ferroelectric Domains and Topological Defects in Vacancy Doped Ceramics of H-Lumno3

AuthID
P-00M-ZRY
5
Author(s)
Baghizadeh, A
·
Vaghefi, PM
·
Willinger, MG
·
Tipo de Documento
Article
Year published
2017
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 122, Número: 4
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-85026521135
Wos: WOS:000409414100024
Source Identifiers
ISSN: 0021-8979
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