Temperature Dependent Effective Mass in Algan/Gan High Electron Mobility Transistor Structures

AuthID
P-002-3FY
11
Author(s)
Hofmann, T
·
Kuehne, P
·
Schoeche, S
·
Chen, JT
·
Forsberg, U
·
Herzinger, CM
·
Woollam, JA
·
Schubert, M
·
Tipo de Documento
Article
Year published
2012
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 101, Número: 19, Páginas: 192102 (4)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-84869037447
Wos: WOS:000311320100032
Source Identifiers
ISSN: 0003-6951
Export Publication Metadata
Info
At this moment we don't have any links to full text documens.