The Effects of Argon and Helium Dilution in the Growth of Nc-Si:h Thin Films by Plasma-Enhanced Chemical Vapor Deposition

AuthID
 P-00N-7G2
5
Author(s)
Chaibi, F
·
Jemai, R
·
Khemakhem, H
·
Khirouni, K
Tipo de Documento
Article
Year published
2018
Publicado
in JOURNAL OF MATERIALS SCIENCE, ISSN: 0022-2461
Volume: 53, Número: 5, Páginas: 3672-3681 (10)
Indexing
Wos®
Scopus®
Crossref®12
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-85033487252
Wos: WOS:000417731300047
Source Identifiers
ISSN: 0022-2461
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service