Fully Solution-Induced High Performance Indium Oxide Thin Film Transistors with Zro: X High-K Gate Dielectrics

AuthID
 P-00N-Z6W
5
Author(s)
Zhu, L
·
He, G
·
Lv, J
·
Martins, R
Tipo de Documento
Article
Year published
2018
Publicado
in RSC Advances, ISSN: 2046-2069
Volume: 8, Número: 30, Páginas: 16788-16799
Indexing
Scopus®
Crossref®51
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-85046893780
Source Identifiers
ISSN: 2046-2069
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service