Substrate Temperature Influenced Physical Properties of Silicon Mos Devices with Tio2 Gate Dielectric

AuthID
 P-002-6MG
5
Author(s)
Kondaiah, P
·
Tipo de Documento
Article
Year published
2012
Publicado
in SURFACE AND INTERFACE ANALYSIS, ISSN: 0142-2421
Volume: 44, Número: 9, Páginas: 1299-1304 (6)
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Publication Identifiers
SCOPUS: 2-s2.0-84865214984
Wos: WOS:000307731400011
Source Identifiers
ISSN: 0142-2421
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