Resistive Switching and Activity-Dependent Modifications in Ni-Doped Graphene Oxide Thin Films

AuthID
P-002-6ZX
Tipo de Documento
Article
Year published
2012
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 101, Número: 6, Páginas: 063104 (4)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-84865141673
Wos: WOS:000307862400067
Source Identifiers
ISSN: 0003-6951
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