Epitaxial Ge-Rich Silicon Layers After Dry Oxidation of Ge Implanted Silicon

AuthID
 P-00P-Y51
3
Author(s)
Lotfi, E
·
Agha Aligol, D
Tipo de Documento
Article
Year published
2019
Publicado
in VACUUM, ISSN: 0042-207X
Volume: 160, Páginas: 311-315 (5)
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Publication Identifiers
SCOPUS: 2-s2.0-85057330213
Wos: WOS:000456491300042
Source Identifiers
ISSN: 0042-207X
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