Electronic Structure of Ytterbium-Implanted Gan at Ambient and High Pressure: Experimental and Crystal Field Studies

AuthID
 P-002-C53
7
Author(s)
Kaminska, A
·
Ma, CG
·
Brik, MG
·
Kozanecki, A
·
Bockowski, M
·
Suchocki, A
Tipo de Documento
Article
Year published
2012
Publicado
in JOURNAL OF PHYSICS-CONDENSED MATTER, ISSN: 0953-8984
Volume: 24, Número: 9, Páginas: 095803 (8)
Indexing
Wos®
Scopus®
Crossref®
Pubmed®
Google Scholar®
Publication Identifiers
Pubmed: 22322935
SCOPUS: 2-s2.0-84857242858
Wos: WOS:000300641000024
Source Identifiers
ISSN: 0953-8984
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service