Publicações

Transfer Characteristic of Zinc Nitride Based Thin Film Transistors

AuthID
P-002-G3C

Author(s)

Bhattacharyya, SR

Ayouchi, R

Pinnisch, M

Schwarz, R

Editor(es)

Parbrook, PJ; Martin, RW; Halsall, MP

Tipo de Documento

Proceedings Paper

Year published

2012

Publicado

in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 in Physica Status Solidi C-Current Topics in Solid State Physics, ISSN: 1862-6351

Volume: 9, Número: 3-4, Páginas: 469-472 (4)

Conference

9Th International Conference on Nitride Semiconductors (Icns), Date: JUL 10-15, 2011, Location: Glasgow, SCOTLAND, Patrocinadores: AIXTRON, AkzoNobel, LG Elect, OSRAM Opto Semicond, CREE, LAYTEC In-situ Sensors, Philips Lumileds, Veeco, Glengoyne

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