High-Performance Junction Field-Effect Transistor Based on Black Phosphorus/Beta-Ga(2)O(3)Heterostructure

AuthID
 P-00S-NAF
9
Author(s)
Li, C
·
Chen, C
·
Chen, J
·
He, T
·
Li, HW
·
Xie, L
·
Zhang, K
Tipo de Documento
Article
Year published
2020
Publicado
in JOURNAL OF SEMICONDUCTORS, ISSN: 1674-4926
Volume: 41, Número: 8
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Publication Identifiers
SCOPUS: 2-s2.0-85091093320
Wos: WOS:000562269500001
Source Identifiers
ISSN: 1674-4926
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