A Multiple-Time-Scale Analog Circuit for the Compensation of Long-Term Memory Effects in Gan Hemt-Based Power Amplifiers

AuthID
P-00S-QDY
4
Author(s)
Tome, PM
·
Barradas, FM
·
Tipo de Documento
Article
Year published
2020
Publicado
in IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, ISSN: 0018-9480
Volume: 68, Número: 9, Páginas: 3709-3723 (15)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-85090995695
Wos: WOS:000567463700010
Source Identifiers
ISSN: 0018-9480
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