Toggle navigation
Publicações
Investigadores
Instituições
0
Entrar
Autenticação Federada
(Click on the image)
Autenticação local
Recuperação de Password
Register
Entrar
Publicações
Procurar
Estatísticas
An Rf Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction
AuthID
P-00T-5JC
5
Author(s)
Hari, N
·
Ramasamy, S
·
Ahsan, M
·
Haider, J
·
Rodrigues, EMG
Document Type
Article
Year published
2020
Published
in
ELECTRONICS,
ISSN: 2079-9292
Volume: 9, Issue: 12, Pages: 1-19 (19)
Indexing
Wos
®
Scopus
®
Google Scholar
®
Metadata
Sources
Publication Identifiers
DOI
:
10.3390/electronics9122007
Scopus
: 2-s2.0-85096856675
Wos
: WOS:000601948000001
Source Identifiers
ISSN
: 2079-9292
Export Publication Metadata
Export
×
Publication Export Settings
BibTex
EndNote
APA
Export Preview
Lista
Marked
Adicionar à lista
Marked
Info
At this moment we don't have any links to full text documens.
×
Select Source
This publication has:
2 records from
ISI
2 records from
SCOPUS
2 records from
DBLP
2 records from
Unpaywall
2 records from
Openlibrary
2 records from
Handle
Please select which records must be used by Authenticus!
×
Preview Publications
© 2024 CRACS & Inesc TEC - All Rights Reserved
Privacy Policy
|
Terms of Service